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Electron Transport: Resonant Tunneling Through Semiconductor Heterojunctions

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4. Semiconductor Heterojuctions: Creating Potential Barriers

Semiconductor Band Gap Effective Mass
Silicon 1.12 eV 1.08 me
GaAs 1.42 eV 0.067 me
AlAs 2.16 eV 0.15 me
eV = electron volts
me = mass of electron
Table 1. Some Semiconductor Properties

Lets build a rectangular potential barrier to scatter electrons. We know that that electrons traveling in the conduction band are approximately free particles with an effective mass. What if we insert a small region of a different semiconductor, B, into an otherwise homogenous semiconductor A. In Figure 4, A is Gallium Arsenide and B is Aluminum Arsenide. Note that B has a larger band gap than A. So an electron travelling in A that impinges on B will see an approximately square potential barrier since the electron will have to jump up into B's conduction band to continue flowing. This type of device geometry is called a heterojunction. Now that we can construct potential barriers we are ready to discuss resonance.

Figure 4: Semiconductor Heterojunction
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